| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1547961 | Physica E: Low-dimensional Systems and Nanostructures | 2006 | 4 Pages |
Abstract
We study the properties of high mobility GaAs/GaAlAs quantum well structure by monitoring the microwave induced changes in the low-temperature photoluminescence of the 2DEG as a function of the external magnetic field. The most pronounced changes are observed at cyclotron resonance conditions, but weak features are also visible at cyclotron resonance replicas. Possible observation of microwave induced shift in the Landau-level structure of magneto-photoluminescence is reported in addition to the effects of carrier heating which are conventionally bracketed together with microwave irradiation.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
S. Moreau, M. Byszewski, M.L. Sadowski, M. Potemski, S.A. Studenikin, G. Austing, A.S. Sachrajda, T. Saku, Y. Hirayama,