Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1547962 | Physica E: Low-dimensional Systems and Nanostructures | 2006 | 4 Pages |
Abstract
We present kinetic lattice Monte Carlo simulations of Ge deposition onto a reconstructed Si (1Â 0Â 0) surface. We account for the exchange of Ge with Si atoms in the substrate, considering two different exchange mechanisms: a dimer exchange mechanism whereby Ge-Ge dimers on the surface become intermixed with substrate Si atoms, and the exchange of Ge atoms below the surface to relieve misfit strain. We examine how Si-Ge exchange affects the interface between the materials when the growth simulations are done at different temperatures.
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Authors
R. Akis, D.K. Ferry,