Article ID Journal Published Year Pages File Type
1547962 Physica E: Low-dimensional Systems and Nanostructures 2006 4 Pages PDF
Abstract
We present kinetic lattice Monte Carlo simulations of Ge deposition onto a reconstructed Si (1 0 0) surface. We account for the exchange of Ge with Si atoms in the substrate, considering two different exchange mechanisms: a dimer exchange mechanism whereby Ge-Ge dimers on the surface become intermixed with substrate Si atoms, and the exchange of Ge atoms below the surface to relieve misfit strain. We examine how Si-Ge exchange affects the interface between the materials when the growth simulations are done at different temperatures.
Related Topics
Physical Sciences and Engineering Materials Science Electronic, Optical and Magnetic Materials
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