Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1547966 | Physica E: Low-dimensional Systems and Nanostructures | 2006 | 4 Pages |
Abstract
We present time-resolved photoluminescence (PL) results of a series of GaP1-xNx samples with x up to 0.01. The temperature dependence, the concentration dependence as well as the temporal behavior indicate that the PL is dominated by excitation transfer processes between the extended band states and localized N-related states (such as the isolated N-impurity, various N-pair states and higher N-clusters) as well as by excitation transfer between the various localized N-related states themselves. The excitation transfer processes in conjunction with the concentration-dependent statistics of the various N-related states alone are sufficient to explain the observed red-shift of the luminescence of GaP1-xNx with increasing x as well as the spectral dependence of the PL decay times. However, this implies that the PL data alone do not give any conclusive evidence that a hard transformation from an indirect to a direct-gap semiconductor takes place in Ga(N,P) with increasing N up to 2% as often stated.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
T. Niebling, T. Lapp, J. Kampmann, P.J. Klar, W. Heimbrodt, B. Kunert, K. Volz, W. Stolz,