Article ID Journal Published Year Pages File Type
1547966 Physica E: Low-dimensional Systems and Nanostructures 2006 4 Pages PDF
Abstract
We present time-resolved photoluminescence (PL) results of a series of GaP1-xNx samples with x up to 0.01. The temperature dependence, the concentration dependence as well as the temporal behavior indicate that the PL is dominated by excitation transfer processes between the extended band states and localized N-related states (such as the isolated N-impurity, various N-pair states and higher N-clusters) as well as by excitation transfer between the various localized N-related states themselves. The excitation transfer processes in conjunction with the concentration-dependent statistics of the various N-related states alone are sufficient to explain the observed red-shift of the luminescence of GaP1-xNx with increasing x as well as the spectral dependence of the PL decay times. However, this implies that the PL data alone do not give any conclusive evidence that a hard transformation from an indirect to a direct-gap semiconductor takes place in Ga(N,P) with increasing N up to 2% as often stated.
Related Topics
Physical Sciences and Engineering Materials Science Electronic, Optical and Magnetic Materials
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