| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1547973 | Physica E: Low-dimensional Systems and Nanostructures | 2006 | 5 Pages |
Abstract
We use a modified band-anticrossing (BAC) model to investigate the band dispersion in a GaNxAs1-x/AlGaAsGaNxAs1-x/AlGaAs quantum well (QW) as a function of hydrostatic pressure. The band edge mass increases considerably more quickly with pressure than in the case of a GaAs/AlGaAs QW, and the subband separation also decreases significantly. We predict that the strong anticrossing interaction between the GaAs host conduction band and isolated N levels will inhibit tunnelling through the QW for a range of energy above the isolated N levels. The energy of N resonant states depends strongly on details of the local environment, giving a broader calculated distribution of N states in GaInNAs compared to GaNAs.
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Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
S.B. Healy, A. Lindsay, E.P. O’Reilly,