| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1548003 | Physica E: Low-dimensional Systems and Nanostructures | 2006 | 4 Pages |
Abstract
We present results on fabrication, and structural and electrical properties of single-crystal Fe3Si/GaAs(001) heterostructures grown by molecular beam epitaxy. The exact stoichiometry of the Heusler alloy films can be achieved for almost lattice matched films. As evidenced by high-resolution X-ray diffraction, transmission electron microscopy, and resistivity measurements, we find an optimum growth temperature of TG=250âC, to obtain ferromagnetic layers with high crystal and interface perfection as well as high degree of atomic ordering. .
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
J. Herfort, B. Jenichen, V. Kaganer, A. Trampert, H.-P. Schönherr, K.H. Ploog,