| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1548004 | Physica E: Low-dimensional Systems and Nanostructures | 2006 | 4 Pages |
Abstract
The Landauer–Büttiker formalism combined with the tight-binding transfer matrix method is used to describe the results of recent experiments: the high tunneling magnetoresistance (TMR) in (Ga,Mn)As-based trilayers and highly polarized spin injection in p-(Ga,Mn)As/n-GaAs Zener diode. For both TMR and Zener spin current polarization, the calculated values agree well with those observed experimentally. The role played in the spin dependent tunneling by carrier concentration and magnetic ion content is also studied.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
P. Sankowski, P. Kacman, J. Majewski, T. Dietl,