Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1548365 | Progress in Natural Science: Materials International | 2013 | 6 Pages |
Abstract
A series of ~60 nm thick indium oxide thin-films, all amorphous as determined by x-ray diffraction, were found to have physical and electrical properties that depended on the temperature of deposition. The carrier mobility and film conductivity decreased with decreasing deposition temperature; the best electrical properties of high mobility and conductivity were observed at a deposition temperature just below the temperature at which crystalline films formed. The density of the film also decreased with deposition temperature from 7.2 g/cm3 at +50 °C to 5.3 g/cm3 at −100 °C.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
D. Bruce Buchholz, Li Zeng, Michael J. Bedzyk, Robert P.H. Chang,