Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1549601 | Solar Energy | 2015 | 11 Pages |
Abstract
This work illustrates low energy hydrogen ion implantation of Si solar cells just before the co-firing process. The cells were hydrogen implanted on the SiNx layer in order to improve the surface passivation and prevent the surface damage by the ion implantation beam. To control the depth of hydrogenated layer, the incident angle of hydrogen ion beam was tilted about 7° from the ã0 0 1ã direction and was also twisted 22.5° from the ã1 1 0ã direction. The cell implanted with low implantation dose of 1013 H+/cm2 and energy of 4 keV showed highest efficiency of 18.02% due to the excellent surface passivation property, high photocurrent and minority carrier lifetime as compared to the reference and other implanted silicon solar cells.157
Related Topics
Physical Sciences and Engineering
Energy
Renewable Energy, Sustainability and the Environment
Authors
Bhaskar Parida, Gyoungho Lim, Jaeho Choi, Srikanta Palei, Keunjoo Kim,