Analysis of photovoltaic cell parameters of non-vacuum solution processed Cu(In, Ga)Se2 thin film based solar cells

A cost effective and environment friendly technique was used to fabricate CIGS solar cell. An analysis was made for the losses in the non-vacuum processed CIGS solar cells due to photovoltaic (PV) cell parameters. The PV cell parameters of the solar cells were determined at various doping concentrations of Cu and In in CIGS films. The maximum achieved efficiency was ∼4.38%. Analytically predicted values of Rsh, Rs, n and J0 of best solar cell were 116.82 Ω cm2, 4.64 Ω cm2, 1.8016 and 1.4952 × 10−6 A/cm2, respectively.114