Impedance spectroscopy coupled with voltammetry for quantitative evaluation of temperature and voltage dependent parameters of a silicon solar cell

The techniques of linear sweep voltammetry (LSV) and impedance spectroscopy (IS) are combined to study the detailed temperature and voltage dependencies of a range of performance-indicator parameters of a mono-crystalline n+–p Si solar cell. The complex nonlinear least square fitting procedure is employed for quantitative evaluation of the IS data. The underlying mechanisms of the observed temperature/voltage sensitive characteristics of the cell are examined using a collection of currently available theoretical models. The individual roles of minority carrier diffusion and defect-induced charge recombination are manifested in the voltage and temperature dependent signatures of the measured cell parameters. These parameters include the transition layer capacitance and built-in potential of the n+–p interface, the acceptor concentration in the base, the series, shunt and recombination resistances, and the effective diode ideality factor.

► We demonstrate electroanalytical techniques for solar cell characterization. ► These techniques can measure both AC and DC parameters of solar cells. ► A single experimental platform concurrently probes multiple parameters of a cell. ► Temperature and voltage dependencies of the diode ideality factor are evaluated. ► Minority carrier diffusion and defect-induced effects are separated.