| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1551439 | Solar Energy | 2011 | 7 Pages |
The n-CdIn2Se4/p-CdTe heterojunction solar cells have been fabricated by deposition of n-CdIn2Se4 thin films using spray pyrolysis on to p-CdTe. Current density–voltage and capacitance–voltage measurements were performed to determine the electrical properties of the structures. The capacitance–voltage behavior indicates an abrupt interface. The junction quality factor (n), series and shunt resistance (Rs and Rsh), fill factor (FF) and efficiency (η) for the cell have been estimated. The device exhibit maximum fill factor (FF), power conversion efficiency (η) of about 0.55% and 0.67%.
► Development of sprayed n-CdIn2Se4/p-CdTe heterojunction solar cell. ► Dependence of I–V characteristics in forward and reverse bias has studied. ► Performance testing of n-CdIn2Se4/p-CdTe heterojunction solar cells.
