| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1552421 | Solar Energy | 2006 | 5 Pages |
Abstract
Bulk and thin films of CuIn0.75Ga0.25Te2 have been grown using respectively the sealed quartz ampoule and the flash evaporation techniques. X-ray diffraction results showed that the semiconductor has the chalcopyrite structure. The gaps of the materials were determined from optical measurements and found to be 0.99 and 1.14Â eV, respectively for bulk and annealed films. Photoluminescence data showed a broad emission localised at 1.05Â eV.
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Authors
M. Benabdeslem, L. Bechiri, N. Benslim, L. Mahdjoubi, E.B. Hannech, M. Zouiti, G. Nouet,