Electrostatic performance improvement of dual material cylindrical gate MOSFET using work-function modulation technique

In a continuous effort to increase the DC and RF figure-of-merits (FOMs), multigate MOSFETs have evolved from classical planar device into a gate all around structure. The unique design with accuracy in device performance has made it a cutting edge device to overcome the scaling and performance barrier of the present VLSI technology. The fabrication process of a surface channel device with proper threshold voltage (Vth) directly depends upon the work-function of the gate electrode. By keeping it in mind, a metal gate with linearly modulated work-function (5-4.2 ev) along the z-axis in a cylindrical surrounding gate MOSFET is introduced. This work demonstrates the potential benefits of work-function modulation based dual material cylindrical gate MOSFET (WMDMCG) in terms of DC performance characteristics. The present model provides improved DC performance as compared to conventional dual material cylindrical surrounding gate MOSFET (DMCG) and the results obtained are validated with TCAD device simulator from Synopsys.