| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1552520 | Superlattices and Microstructures | 2016 | 5 Pages |
•We report UV LEDs with polarization doped p-type layer to improve the hole concentration in p-AlGaN layer.•Both experimental and simulated results reveal that this p-type layer can enhance the performance of ultraviolet LEDs.•This p-type layer can block electron effectively and enhance the hole injecting into the MQWs without an EBL.
We report ultraviolet light emitting diode (LEDs) with polarization doped p-type layer. Fabricated LEDs with polarization doped p-type layer exhibited reduced forward voltage and enhanced light output power, compared to those with traditional p-type AlGaN layer. The improvement is attributed to improved hole concentration and the smooth valence band by the polarization enhanced p-type doping. Our simulated results reveal that this p-type layer can further enhance the performance of ultraviolet LEDs by removing the electron blocking layer (EBL).
