| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1552531 | Superlattices and Microstructures | 2016 | 4 Pages |
•A theoretical model of GaN/AlGaN Superlattice MOSFET has been designed.•Static characteristics of Superlattice MOSFETs have been studied here.•It is seen that due to total scattering, the mobility increases rapidly for very low value of temperature and after 82 K it decreases slowly.•The drain current is found to be considerably high for small drain voltages, shows the promise for design of high power devices with such superlattice MOSFETS.
In present analysis initially authors have studied the variation of mobility with lattice temperature in Nitride based superlattice MOSFETs and have compared the results with temperature dependent measured mobility of two dimensional electrons in AlGaN/GaN superlattice structure. Based on these mobilities a superlattice MOSFET is designed in which static characteristics following different scattering mechanisms are discussed.
