| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1552539 | Superlattices and Microstructures | 2016 | 7 Pages |
Abstract
The effects of the Aluminium concentration on the emission of Al0.45In0.55As/AlyGa1ây As quantum dots (QDs) are investigated by photoluminescence (PL), with the excitation power density as a variable parameter. The influence of a varying barrier composition on the QD emission is investigated theoretically and discussed with respect to PL measurements. For the highest barrier composition value (y = 0.77), we interpret the QD emission as originating from indirect type-II transitions involving electrons in the barrier X valley and heavy holes (HH), with S and P symmetry, in Al0.45In0.55As QDs. The PL spectra of the y = 0.38 sample exhibits three lines: two of them are related to indirect type-II transitions, in which the electron ground state belongs to the indirect gap (L and X) minima in the barrier conduction band, whereas the third transition is attributed to a direct type-I transitions.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
R. Neffati, I. Saïdi, S. Ben Radhia, A. Ben Daly, M.A. Maaref, K. Boujdaria, A. Lemaître, F. Bernardot, C. Testelin,