| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1552658 | Superlattices and Microstructures | 2016 | 8 Pages |
•Investigation into the photogenerated changes that occur in the capacitance–voltage (C–V) characteristics of Metal-Oxide-Semiconductor (MOS) photodetector, having a silicon nanocrystals (Si-ncs) embedded in SiOx=1.5 tunnel oxide layers with a very small area.•Demonstration of the ability of photo-C-V measurements to study the charge state of Si-ncs in an MOS photodetectors and identify the tunneling phenomena between the semiconductor and the Si-ncs layer.•Demonstrated the important contribution of photo-generated charges to the Si-ncs charging/discharging photo-response time.
The results are reported of a detailed investigation into the photogenerated changes that occur in the capacitance–voltage (C–V) characteristics of Metal-Oxide-Semiconductor (MOS) photodetector, having a silicon nanocrystals (Si-ncs) embedded in SiOx=1.5 tunnel oxide layers. In order to study the influence of photon energy on charging/discharging photo-response of nanocrystal-based MOS structures, we have examined photo-capacitance-voltage (photo-CV) measurements at both light intensities 45 μW and 75 μW and wavelengths 436 nm and 595 nm. The photo-CV measurements indicate the important contribution of photo-generated charges to the charging/discharging mechanism. The (Si-ncs) charging/discharging photo-response time is evaluated to be 300 s at wavelength of 595 nm for 75 μW optical power at room temperature. This response time is influenced by the photogenerated-holes lifetime in the Si-ncs.
