Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1552761 | Superlattices and Microstructures | 2016 | 7 Pages |
Abstract
Cost-effective mask-sharing technology for the 200Â V silicon-on-insulator (SOI) lateral insulated gate bipolar transistor (LIGBT) and p-channel lateral double-diffused MOS (PLDMOS) are proposed in this paper. N-well and P-body implantations are shared as an N-buffer implantation of the LIGBT and P-buffer implantation of the PLDMOS, respectively, which reduces two masks compared with the conventional process. The structure and process parameters for LIGBT and PLDMOS with the new process are optimized by simulation to achieve good performance. The experimental results indicate that the LIGBT and PLDMOS using the new process maintain the same performance compared to the conventional devices.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Yong Huang, Ming Qiao, Xin Zhou, Tao Liang, Yang Li, Zhaoji Li, Bo Zhang,