| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1552775 | Superlattices and Microstructures | 2016 | 9 Pages |
•In Schottky Diode (SD) is formed additional electric field (AEF).•In the SD via AEF is formed potential barrier.•In forward and primary reverse bias parameters SD have similar values.
In Cu–nSi Schottky diode (SD) with inhomogeneous contact surface at the active participation of the additional electric field (AEF) is formed a effective potential barrier height. Forward and initial reverse I–V characteristics SD are determined by the current flowing through almost the entire contact surface and is well described by the thermionic emission theory, as in the idealized homogeneous SD. In a forward and primary reverse bias the effective potential barrier height, the ideality factor (dimensionless coefficient), the contact resistance, the peripheral area and width of the contact surface, the contribution of peripheral current to the total current DS have appropriate similar values. The contribution of peripheral current to the total current SD increases with increasing reverse voltage. The second portion of the reverse I–V characteristics SD, which consists only of peripheral current is represented by a straight line in a semi-logarithmic scale. Its electrophysycal parameters are differed from that for of the first initial portion I–V characteristics SD.
