The formation of indirect excitons in atomic layer doped systems

•Atomic layer doped structure in GaAs.•Thomas–Fermi approximation for the Hartree potential.•Indirect excitons calculated by exact Hamiltonian diagonalization.•Exciton binding energy as function of inter-doping layer distance.•Linear and nonlinear inter-exciton-state optical absorption coefficients.

The investigation on the formation of indirect exciton states in atomic layer doped structures is presented. A GaAs-based system with n-type and p-type delta-doping layers is proposed and the separately confined electron and hole states are calculated in the effective mass approximation, with the exciton states being determined trough a diagonalization of the Hamiltonian for the electrostatically coupled electron–hole system. The binding energy of the s-type electron-heavy-hole-like exciton state is calculated as a function of the inter-doping-layer distance and the optical absorption coefficient related with inter-exciton-state transitions is reported.