Article ID Journal Published Year Pages File Type
1552932 Superlattices and Microstructures 2015 7 Pages PDF
Abstract
The ground state binding energy of heavy hole excitons confined in GaAs1−xBix/GaAs spherical quantum dots is calculated as a function of dot radius and the Bi content using a Variational method based on 1-s hydrogenic wave functions with effective mass approximation. The parameter shows strong dependence on the Bi mole fraction x, particularly at smaller values of the dot radii. The strain associated with the quantum dot is found to decrease exponentially with increase in dot radius and shows a linear increase with Bi composition.
Related Topics
Physical Sciences and Engineering Materials Science Electronic, Optical and Magnetic Materials
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