Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1552939 | Superlattices and Microstructures | 2015 | 5 Pages |
Abstract
We have fabricated and investigated InGaN/GaN nanopyramid arrays grown on c-plane sapphire by selective area growth technique. The double InGaN/GaN superstructures were formed in one GaN pyramid observed in transmittance emission microscopy. The two growth faces on GaN nanopyramind showed different growth rates, resulted in double superheterostructures of semi-polar facets for InGaN/GaN multiple quantum wells (MQWs) and c-plane InGaN/GaN nano-hetero-disk (NHD) under the nanoscale growth condition. The c-plane InGaN/GaN NHD had high Indium composition due to the pulling effect, exhibiting double wavelength emissions from GaN nanopyramid. And InGaN/GaN MQWs and c-plane InGaN/GaN NHD showed extremely low quantum confinement Stark effect, yielding great light emission efficiency. This result is beneficial for the development of blue, green and white light-emitting diodes.
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Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Chiao-Yun Chang, Heng Li, Kuo-Bin Hong, Ya-Yu Yang, Wei-Chih Lai, Tien-Chang Lu,