| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1552990 | Superlattices and Microstructures | 2015 | 6 Pages |
•A novel trench power MOSFET with a buried-interface-drain (BID MOSFET) is proposed.•The influences of structure parameters on the device performances are investigated.•An ultralow Ron,sp of 0.85mΩ cm2 is obtained with a breakdown voltage (VB) of 133 V.•BID MOSFET is compared with several previous-proposed trench MOSFETs.•A significantly optimized dependence of Ron,sp on VB is obtained.
A novel trench power MOSFET with a buried-interface-drain (BID MOSFET) is proposed in this paper. The drain n+ region of BID MOSFET extends to the surface of p− substrate and is buried along the interface of the substrate–layer and epitaxy-layer, which shortens the motion-path in the high-resistance n− drift region for the carriers, and therefore, exhibits a lower specific on-resistance (Ron,sp) and a higher figure-of-merit. The influences of structure parameters on the device performances are investigated. An ultralow Ron,sp of 0.85 mΩ cm2 is obtained with a breakdown voltage (VB) of 133 V. BID MOSFET is compared with several previous-proposed trench MOSFETs, and a significantly optimized dependence of Ron,sp on VB is obtained.
