| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1553007 | Superlattices and Microstructures | 2015 | 12 Pages |
Abstract
The heterojunction device structure In/PANI-DBSA/Al and In/PANI-HCl/Al was made to fabricate by thermal evaporation method. The current voltage (I-V) characteristics of these devices are weak rectifying behavior with the non-linear nature. The diode parameters such as ideality factor, barrier height and saturation current densities were calculated using the modified Shockley equation.
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Physical Sciences and Engineering
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Electronic, Optical and Magnetic Materials
Authors
S. Ashokan, V. Ponnuswamy, P. Jayamurugan, J. Chandrasekaran, Y.V. Subba Rao,