Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1553033 | Superlattices and Microstructures | 2015 | 8 Pages |
Abstract
Device performance of 10Â nm length armchair graphene nanoribbon field effect transistors with 1.5Â nm and 4Â nm width (13 and 33 atoms in width respectively) are compared in terms of Ion/Ioff, trans-conductance, and sub-threshold swing. While narrow devices suffer from edge roughness wider devices are subject to more substrate surface roughness and reduced bandgap. Boron Nitride doping is employed to compensate reduced bandgap in wider devices. Simultaneous effects of edge and substrate surface roughness are considered. Results show that in the presence of both the edge and substrate surface roughness the 4Â nm wide device with boron nitride doping shows improved performance with respect to the 1.5Â nm one (both of which incorporate the same bandgap AGNR as channel material). Electronic simulations are performed via NEGF method along with tight-binding Hamiltonian. Edge and surface roughness are created by means of one and two dimensional auto correlation functions respectively. Electronic characteristics are averaged over a large number of devices due to statistic nature of both the edge and surface roughness.
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Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
A. Yazdanpanah Goharrizi, M. Sanaeepur, M.J. Sharifi,