| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1553036 | Superlattices and Microstructures | 2015 | 8 Pages |
Abstract
In this paper, a novel method for extraction of electron mobility in the two-dimensional electron gas (2DEG) under the gate of power HEMTs is presented. Using this method enables the potential impact of the gate metal and the gate voltage on electron mobility in the 2DEG under the gate to be measured without the error due to the resistive regions outside the gate, which are the gate-to-source and gate-to-drain regions. The application of the new method was demonstrated by measurements on fabricated circular HEMTs.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Amirhossein Aminbeidokhti, Sima Dimitrijev, Jisheng Han, Xiangang Xu, Chengxin Wang, Shuang Qu, Hamid Amini Moghadam, Philip Tanner, David Massoubre, Glenn Walker,