Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1553038 | Superlattices and Microstructures | 2015 | 16 Pages |
Abstract
In this paper, an analytical model for Junctionless (JL) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) based biosensor for label free electrical detection of biomolecules like enzyme, cell, DNA etc. using the Dielectric Modulation (DM) technique has been developed. The analytical results are validated with the help of “Sentaurus” device simulation software. For the biomolecule immobilization, nanogap cavity is formed in the JL MOSFET by etching gate oxide layer from both source as well as drain end of the channel. As a result, the surface potential in the channel underneath the nanogap cavity region is affected by the neutral and charged biomolecules that binds to SiO2 adhesion layer in the cavity. The surface potential solution is obtained by solving a 2-D Poisson's equation assuming parabolic potential profile in the channel. The shift in threshold voltage and drain current of the device has been considered as the sensing metric for detection of biomolecules under dry environment condition.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Ajay Ajay, Rakhi Narang, Manoj Saxena, Mridula Gupta,