| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1553048 | Superlattices and Microstructures | 2015 | 8 Pages |
Abstract
The present study investigates the effect of annealing on In3Se2/Cu2Se/In3Se2 sandwich structure deposited by thermal evaporation technique for CIS solar cells. The X-ray diffraction pattern reveals that annealing improves the crystallinity and the formation of CIS composites cross section SEM image the uniform distribution of crysatllite spread over entire substrate. Also a clear distinguished between subsequent layer is visible from the image. Photoluminescence (PL) study shows the formation of Cu2Se-In2Se composites. The Energy band gap value calculated for as deposited films is 2.49 eV and same upon annealing splitted into 1.57, 1.96 eV after annealing at 150° which is evident from UV visible spectrographs.
Related Topics
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Authors
A. Mohan, S. Rajesh,