Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1553094 | Superlattices and Microstructures | 2015 | 11 Pages |
Abstract
In the present study, first principles calculations were carried out to reveal the spin unrestricted electronic structure behavior of both pure and transition metal (TM) atom (V and Co) doped InN nanoribbons (InN-NRs). The influence of a substitutionally doped TM atom on the electronic structure nature was examined. The role of a TM dopant together with its location, governing the characteristic of spin dependent electronic property of a doped InN-NR, was addressed. The relevant properties were extracted through Hubbard correction for In-d, N-p and TM-d states. We observed that a single TM dopant diminished the spin dependent energy gap and can result in a significant induced magnetic moment in an InN-NR system. It was exposed that TM dopants can play an essential role in the spin unrestricted electronic behavior and spin polarization, which can be tuned through a V or Co atom at a certain position.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
S. Caliskan, F. Hazar,