| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1553117 | Superlattices and Microstructures | 2015 | 8 Pages |
•We proposed an AlxInyGazN spectral adjustment layer for dual-wavelength LEDs.•The influences of Al/In ratios for spontaneous emission rate of each MQWs studied.•The adjustment of emission rate for each MQWs realized with tuning the Al/In ratios.•We investigated the effects of injection current for emission rate of each MQWs.•The relation of spontaneous emission rate with injection currents explained.
In this paper, we propose AlxInyGazN quaternary alloys spectral adjustment layer (SAL) for visible spectrum control of dual-wavelength emission in single-chip InGaN/AlInGaN multiple quantum wells (MQWs) light-emitting diodes (LEDs). The mechanism and effects for visible spectrum control with different ratios of Al to In (Al/In) in the AlInGaN spectral adjustment layer are investigated numerically. With the increasing of the Al/In ratios in the spectral adjustment layer, the spontaneous emission rate of In0.08Ga0.92N/Al0.1In0.008Ga0.892N active region increase, while the spontaneous emission rate In0.16Ga0.84N/Al0.1In0.008Ga0.892N active region is suppressed. Besides, the influence of driving current for visible spectrum control is also expounded. The simulation results show that the spontaneous emission rate of In0.16Ga0.84N/Al0.1In0.008Ga0.892N active region could be enhanced more than In0.08Ga0.92N/Al0.1In0.008Ga0.892N active region with the increasing of driving current. By the adjustment of spontaneous rates in the two active regions, the relative luminous spectrum of dual-wavelength in InGaN/AlInGaN LEDs can be controlled.
