| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1553133 | Superlattices and Microstructures | 2015 | 8 Pages |
•The near-resonance Raman scattering of AlInN/AlN/GaN heterostructure happens under the UV light (325 nm) excitation.•Interface-related phonon modes in this structure are observed due to the resonance enhanced effect.•The theoretical results of interface phonon modes are consistent with the experimental results.
The visible and ultraviolet (UV) Raman scattering of an AlInN/AlN/GaN heterostructure were measured under z(x,_)z¯ configuration at room temperature. Compared with the visible Raman spectrum, three new peaks at 609, 700, and 840 cm−1 occurred in the UV Raman spectrum and were verified to result from the resonance enhanced Raman effect. The near-resonance Raman scattering is stimulated by the electron transition process between the valence band and subband of triangular quantum well located at the interface of AlN/GaN because this transition process has a near equal energy with the 325 nm excitation light. According to the calculated dispersion relations of interface phonon modes in the AlInN/AlN/GaN heterostructure and the 2DEG-related resonance enhanced effect, these new Raman peaks were mainly attributed to the interface phonon modes and disorder-activated mode. The contributions from the bulk phonon modes of AlN and AlInN layers play a very minor role.
