Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1553178 | Superlattices and Microstructures | 2015 | 8 Pages |
Abstract
The influence of AlN/GaN superlattices (SL) buffer on the characteristics of AlGaN/GaN-on-Si (1Â 1Â 1) template was studied in detail. There existed an optimized Relative AlN Thickness (RAT) in the superlattices buffer which can not only further filtering the edge- and screw-type dislocations to the upper epilayer and lead to a good crystal quality with narrowest (0Â 0Â 0Â 2) and (1Â 0Â â1Â 2) full width of half maximum (FWHMs), 439â³ and 843â³, but also improve the surface roughness to enhance the Two dimensional electron gas (2DEG) mobility and superior electrical properties were achieved. Moreover, an optimized RAT in SL can induce a proper compressive stress to the subsequently grown GaN epilayer and protect it from crack during the cooling step, which can also lead to a better wafer bending.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Yiqiang Ni, Zhiyuan He, Deqiu Zhou, Yao Yao, Fan Yang, Guilin Zhou, Zhen Shen, Jian Zhong, Yue Zhen, Baijun Zhang, Yang Liu,