Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1553180 | Superlattices and Microstructures | 2015 | 7 Pages |
Abstract
This work attempts to characterize the Au/GaN/GaAs Schottky diode. The thin GaN film is realized by nitridation of GaAs substrates with different thicknesses (0.7-2.2 nm). We propose a study of the electrical quality of the components after the elaboration of the Au/GaN/GaAs systems; first without annealing and the second with annealing at 620 °C. Analysis of the current voltage I-V and capacitance voltage C-V characteristics of the Au/heated GaN/GaAs and Au/GaN/GaAs samples with 2.2 nm of GaN thickness allows the determination of the electrical parameter variations. Then, the ideality factor increases after the annealing at 620 °C and becomes equal to 2.86 and 2.77 for the 5 min and 30 min of nitridation, respectively. The calculated states density Nss shows less defects and traps in the Au/GaN/GaAs structure (not heated). It is seen that the electrical parameters of the Au/heated GaN/GaAs diode are significantly different from the conventional Au/GaAs Schottky diode. The improvement of the parameters may be attributed to the passivation of the GaAs surface with the formation of the GaN interfacial layer.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
A.H. Kacha, B. Akkal, Z. Benamara, M. Amrani, A. Rabhi, G. Monier, C. Robert-Goumet, L. Bideux, B. Gruzza,