Article ID Journal Published Year Pages File Type
1553303 Superlattices and Microstructures 2014 11 Pages PDF
Abstract
Optical properties of InxGa1−xAs films grown on GaAs substrates by metalorganic vapor phase epitaxy were investigated. Spectral reflectance (SR) and photoreflectance (PR) at room temperature and near-infrared photoluminescence (PL) at 10 K were performed. SR signals in the range of 200-1700 nm provided the x-dependence of the critical point energies E1, E1 + Δ1 and E2. Furthermore, band-gap and spin-orbit splitting energies, as well as their broadening parameters were determined from PR spectra and studied as function of In composition ranging from 0 to 0.37. On the other hand, the origins of luminescence bands observed in PL spectra were revealed. A redshift of 16 meV/%In in the band-to-band transition was obtained. All results issued from different characterizations tools are correlated and compared to the literature.
Related Topics
Physical Sciences and Engineering Materials Science Electronic, Optical and Magnetic Materials
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