Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1553303 | Superlattices and Microstructures | 2014 | 11 Pages |
Abstract
Optical properties of InxGa1âxAs films grown on GaAs substrates by metalorganic vapor phase epitaxy were investigated. Spectral reflectance (SR) and photoreflectance (PR) at room temperature and near-infrared photoluminescence (PL) at 10Â K were performed. SR signals in the range of 200-1700Â nm provided the x-dependence of the critical point energies E1, E1Â +Â Î1 and E2. Furthermore, band-gap and spin-orbit splitting energies, as well as their broadening parameters were determined from PR spectra and studied as function of In composition ranging from 0 to 0.37. On the other hand, the origins of luminescence bands observed in PL spectra were revealed. A redshift of 16Â meV/%In in the band-to-band transition was obtained. All results issued from different characterizations tools are correlated and compared to the literature.
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Authors
M.M. Habchi, M. Bedoui, N. Tounsi, I. Zaied, A. Rebey, B. El Jani,