Spin polarization in two dimensional hole gas GaAs/AlGaAs

In this paper, we have studied the magnetoresistance in a dilute two-dimensional hole gas in GaAs/AlGaAs within a parallel magnetic field. To do this, we tried to define the normalized resistivity, ρ(B)/ρ(0), as a function as B/Bχ and B/Bcross, where Bχ is a scaling parameter, and Bcross is determined by the bend of the resistivity curves versus B2. This study shows that there is no dependence between Bχ and Bcross for various hole densities. In order to examine the variation of the susceptibility, χ, we have access the product m*g* versus the hole density. The later is found to be almost constant. In this work we have reanalyzed the data obtained by Kumar et al., which were published in Ref. [4].