| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1553493 | Superlattices and Microstructures | 2014 | 8 Pages |
•Thin film solar cells based on SnS absorbers have been modelled.•SnS films are p-type semiconductor with acceptor concentration about 1019 cm−3.•SnS-based solar cells was numerically analysed by using dedicated SCAPS software.•Shallow acceptors concentration has a crucial effect on SnS conversion efficiency.•Variable compensation ratio donors/acceptors was studied being its effect negligible.
SnS is a promising nontoxic and earth-abundant material suitable for photovoltaic applications. Photovoltaic solar cells based on tin sulphide absorbers have been analysed by using Solar Cell Capacitance Simulator software. The photovoltaic cell consists of SnS absorber layer, CdS as buffer and ZnO as optical window following the sequence p-SnS/CdS/ZnO. After optimization of different parameters and layer thicknesses a maximum efficiency of 10.6%, VOC of 0.92 V, JSC of 13.4 mA/cm2 and Fill Factor of 86.3% were reached. Simulation studies by varying several solar cell parameters such as thickness of various layers reveal that increasing the thickness of absorber layer results in higher efficiency. The concentration of shallow acceptors in the SnS has a crucial effect in the conversion efficiency, which rises up to about 15% for acceptor concentrations of 1019 cm−3. The effect of the compensation ratio between donors and acceptors was also analysed but its effect on conversion efficiency is insignificant.
