Article ID Journal Published Year Pages File Type
1553509 Superlattices and Microstructures 2014 14 Pages PDF
Abstract
Electrically-activated source extension graphene nanoribbon field effect transistor includes an additional step at potential profile of source region which reduces band to band tunneling.
Keywords
Related Topics
Physical Sciences and Engineering Materials Science Electronic, Optical and Magnetic Materials
Preview
Electrically-activated source extension graphene nanoribbon field effect transistor: Novel attributes and design considerations for suppressing short channel effects
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