Realization of reliable p-type ZnO thin films by nitrogen implantation using plasma immersion ion implantation

Plasma immersion ion implantation was used to dope nitrogen in ZnO thin films to achieve p-type films. The doped samples were subsequently annealed at temperatures between 700 °C and 1000 °C. A strong A°X peak around 3.35 eV was detected in the photoluminescence spectra for samples annealed at high temperatures. The p-ZnO films were stable after 9 months and were reproducible. The current-voltage relationship for a p-n heterojunction diode exhibited rectifying behavior with a built-in voltage of 1.6 V.