Article ID Journal Published Year Pages File Type
1553737 Superlattices and Microstructures 2013 16 Pages PDF
Abstract
► Comparison and advantages of this material over other HEMT devices with reference. ► Detailed analysis of AlInGaN/AlN/GaN HEMT with experimental dimensions from [27-29]. ► Model for polarization and drain current model. ► Small signal parameters are derived and compared with TCAD and EXP. using Unity gain method. ► It gives DC and RF plot data with experimental compared results.
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Related Topics
Physical Sciences and Engineering Materials Science Electronic, Optical and Magnetic Materials
Preview
Polarization based charge density drain current and small-signal model for nano-scale AlInGaN/AlN/GaN HEMT devices
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