Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1553764 | Superlattices and Microstructures | 2013 | 8 Pages |
•The effect of temperature on binding energy of donor impurity was studied.•The effect of temperature on the self-polarization was investigated.•The effect of temperature on the electric field polarization was investigated.•Calculations were performed for GaAs/Ga0.7Al0.3As spherical quantum dot.•The self-polarization and electric field polarization were discussed.
Based on the effective mass approximation within a variational approach, we have calculated the temperature effect on the donor binding energy, self-polarization (SP), and electric field polarization (FP) in a GaAs/Ga0.7Al0.3As spherical quantum dot (SQD) with off center donor impurity under the action of electric field and hydrostatic pressure. The binding energy and polarizations are computed as a function of the temperature, and electric field strength for two different pressures. The results show that the values of the self-polarization are greater than the values of the electric field polarization. There are no reports on comparison of the SP and FP in low-dimensional structures, so far.
Graphical abstractThe variations of the self-polarization as a function of temperature for two different values of the electric field strength and hydrostatic pressure in SQD.Figure optionsDownload full-size imageDownload as PowerPoint slide