Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1553843 | Superlattices and Microstructures | 2013 | 7 Pages |
Porous silicon (PSi) has emerged as a potential drug delivery vehicle because of its high surface area to volume ratio, convenient surface chemistry, biocompatibility and very low toxicity. PSi based drug delivery systems can be easily prepared by tuning its morphological characteristics (i.e. porosity, pore size, etc.). In the present study, several PSi single layers were prepared in order to study effect of current density and etching time on PSi morphology. Different characterization techniques including UV–VIS spectrometry and field emission gun scanning electron microscopy have been used to determine porosity, pore size and thickness of PSi layers. The results showed a higher porosity and larger pore size at high current density. Etching rate was also found to be more at higher current density. Thickness of PSi layer was increased with increase in etching time.
Graphical abstractFigure optionsDownload full-size imageDownload as PowerPoint slideHighlights► Porous silicon (PSi) layers were prepared by electrochemical etching process. ► Effects of current density and etching time on PSi morphology were studied. ► At higher current density, higher porosity and large pore sizes were observed. ► Thickness of the PSi layer was found to be dependent on etching time.