Calculation of the bending area of threading dislocations of InGaAs quantum dots on a GaAs substrate

An equilibrium approach is used to calculate the strain energy of InGaAs/GaAs quantum dots (QDs) before and after the onset of bending of threading dislocation (TD) into interfacial misfit dislocation (MD). The energy balance method is adopted to predict critical conditions for TD bending. We find that the critical bending area in which the inclination of TD is energetically favorable depends strongly on the QD component. The results provide guidelines for the design of quantum dot dislocation filter.