Electrochemical growth of GaSe nanostructures and their Schottky barrier characteristics

Highly crystalline GaSe thin film was synthesized by electrochemical deposition technique on a silicon substrate. The X-ray diffractions showed a hexagonal crystal structure with preferential orientation along (0 0 4) plane. The scanning electron microscopy confirmed the homogenous distribution of deposited GaSe film along the silicon substrate. The high resolution electron microscopy showed that the GaSe nanoparticles have mean diameter of 23 nm. The energy dispersion X-ray spectroscopy revealed a high purity of the as-deposited film. The junction characteristics of GaSe/n-Si diode were investigated. The current-voltage characteristics of the GaSe/n-Si were investigated in the temperature range 23-120 °C. The I-V characteristics exhibit non-linearity indicating Schottky contact at the GaSe and n-Si interface. It was noticed the increase of current under the impact of light. Various device parameters such as series resistance, ideality factor and barrier height were estimated. The effect of temperature on the values of junction parameters was analyzed.