Dynamic analytical model for charge transport in octithiophene thin film transistors

In this paper, we develop a device model of an organic thin film transistor (OTFTs) in which the active layers are made of octithiophene. This model is based on variable range hopping theory, i.e., a carrier may either hop over a small distance with a high activation energy or hop over a long distance with a low activation energy. The model takes into account all the operating regimes in direct current and transient mode; the transistor symmetry is also considered. The model has been developed using a physical basis where the model parameters can easily be extracted. The current–voltage characteristics of short-channel organic TFTs have been calculated starting from the solution of the drain current equation for an enhancement mode p-channel MOSFET. A good agreement between theory model and experimental results is obtained. Different transport parameters are extracted by using a fitting method. We have extracted the mobility of charge in saturation regime using differential method. Based on first and second derivative of transfer characteristic we extracted a serial resistance, intrinsic mobility and threshold voltage. The mobility in saturation regime is reproduced using the VRH model. Finally, we give a simple small-signal equivalent circuit.

► An analytical model that describes the operation of octithiophene thin-film-transistors (TFTs) is presented. ► This model is based on the variable range hopping in an exponential DOS for organic transistors. ► The expressions of the capacitances and a simple small-signal equivalent circuit are given.