Low cost anisotropic etching of monocrystalline Si (1 0 0): Optimization using response surface methodology

Reduced surface reflectance and enhanced light trapping is required by any high efficiency solar cell. Anisotropic etching was done on silicon (1 0 0) by using tetramethyl ammonium hydroxide TMAH, (CH3)4NOH, solution at 85 °C. Process variables considered were solution concentration and time proposed by response surface methodology (RSM). An effective surface texture was resulted with reflectance less than 8% without antireflection coating. The antireflection mechanism was also co-related with the etch rate of Si. Optimized values predicted by RSM for time and TMAH concentration were 5 min and 3.50% respectively. The technique and optimization of parameters by using response surface methodology (RSM) could be valuable in the texturization process for high-efficiency Si solar cells.

► Etching was performed by using TMAH, (CH3)4NOH. ► Response surface methodology was used to optimize variables. ► Silicon etch rat was optimized to get minimum reflectivity. ► A minimum reflectivity of 7.82% has been achieved. ► Optimized values for time and concentration were 5 min and 3.50%, respectively.