Si/Si1−xGex/Si-based quantum wells infrared photodetector operating at 1.55 μm

A quantum well infrared photodetector consisting of self-assembled type II SiGe/Si based quantum wells operating around 1.55 μm at room temperature has been investigated. The Si1−yGey/Si/Si1−xGex/Si/Si1−yGey stack results in a ‘W’ like profiles of the conduction and valence bands strain-compensated in the two low absorption windows of silica fibers infrared photodetectors have been proposed. Such computations have been used for the study of the p-i-n infrared photodetectors operating, around (1.3–1.55 μm) at room temperature. The quantum transport properties of electrons and holes were approved with Schrödinger and kinetic equations resolved self-consistently with the Poisson equation. The theoretical performances of the photodetector were carried out such as the dark current mechanisms, the temperature dependence of normalized dark current and the zero-bias resistance area product (R0A).

► SiGe/Si strain compensated structures optimally designed for 1.55 μm detection. ► The dark current density of the SiGe/Si p-i-n structures which takes account the transport mechanisms in quantum wells. ► The temperature dependence of normalized dark current and the zero-bias resistance area product (R0A). ► Transmission coefficients for a multi quantum wells SiGe/Si in the p-i-n structure.