Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1554034 | Superlattices and Microstructures | 2012 | 16 Pages |
Abstract
⺠The current transport mechanisms in Ru/Pd/n-GaN SBD have been investigated. ⺠The calculated BH and ideality factor are 0.27 eV and 3.93 at 105 K, and 0.75 eV and 1.29 at 405 K. ⺠The linearity of the BH vs 1/2kT plot yields a mean BH of 0.89 eV and a standard deviation of 111 mV. ⺠The calculated interface state densities are in the range of 9.38 Ã 1013 to 1.06 Ã 1012 eVâ1 cmâ2. ⺠Two deep level defects are observed in as-grown GaN layer (E1 = 0.54 eV and E2 = 0.68 eV).
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Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
V. Rajagopal Reddy, N. Nanda Kumar Reddy,