| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1554061 | Superlattices and Microstructures | 2011 | 9 Pages |
We investigate the transient behaviors of the dispersion and the absorption in a three-level GaAs/AlGaAs semiconductor quantum well system. It is found that the Fano interference and the energy splitting affect the transient behaviors dramatically, which can be used to manipulate efficiently the gain-absorption coefficient and group velocity of the probe field. The dependence of transient electron population on the Fano interference and the energy splitting is also discussed.
► Transient behaviors of the dispersion and absorption in a semiconductor quantum well are investigated. ► The underlying mechanism for controlling the group velocity via the corresponding parameters of system is provided. ► This scheme is convenient for experimental realization due to its simple design and wide adjustable parameters.
