| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1554070 | Superlattices and Microstructures | 2012 | 7 Pages |
The real Schottky diode (SD) consists of set in parallel connected both electrically cooperating micro- and nano contact ever micro- and nano contacts separately differ from each other only in potential barrier height. They are in an environment of the next micro sites of the general contact surfaces of SD and because of their interaction there is an additional electric field. Under action of an additional electric field character of interrelation of barrier height and the ideality factor of micro-and nano contacts gets specific features. Between the experimental results and energy diagram of the real metal–semiconductor contact has been good agreement.
► Real Schottky Diode consists of set in parallel connected. ► Electrically cooperating micro- and nano contact separately differ from each other in BH. ► They are in an environment of the next micro sites of SD surface. ► Because of their interaction there is additional electric field. ► Under action of an additional electric field of interrelation of BH and n, gets specific features.
