| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1554114 | Superlattices and Microstructures | 2012 | 6 Pages |
Abstract
⺠New structure of quaternary-nitrides Al0.08In0.08Ga0.84N on p-Si as solar cells was fabricated. ⺠Good light trapping and absorption of an incident light over a wide wavelength spectrum is observed. ⺠Piezoelectric effect inside the quaternary-nitrides Al0.08In0.08Ga0.84N coating is employed. ⺠A solar cell with reasonable conversion efficiency of 9.74% has been obtained.
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Physical Sciences and Engineering
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Electronic, Optical and Magnetic Materials
Authors
Alaa J. Ghazai, Wisam J. Aziz, H. Abu Hassan, Z. Hassan,